Abstract
Microstructure modification of silicon nanograins embedded in siliconnitride films by introducing hydrogen reactant in the plasma enhancedchemical vapour deposition process and their optical properties areanalysed using Raman scattering, optical absorption andphotoluminescence (PL) measurements. It is found that the siliconnanograins embedded in the silicon nitride (SiNx) matrix are transformed intosilicon nanocrystals and the optical properties of the films changedramatically when introducing H2 into Ar-sustained plasma. Theoptical absorption coefficient of the films within the band gapdecreases by about one order of magnitude and the PL intensity increasessignificantly, compared with that without hydrogen introduction. Theseresults suggest that atomic hydrogen in the plasma has the function ofcrystallizing silicon nanograins and passivating defects at the siliconnanograins/SiNx interface.
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