Abstract
a-SiC thin films were deposited using pulsed magnetron sputtering by tuning substrate bias voltages. With the increase of bias voltages to −150 V, the microstructure transforms from columnar to featureless, and the surface changes from cauliflower-like to smooth and then to hole. The density of the SiC bond and content of sp3 CC first increase and then decrease and reach a maximum value at −100 V. The internal stress, adhesion strength, hardness (H) and elastic modulus (E) also increase and then decrease due to the changes in structures. The maximal internal stress, adhesion strength, H and E are 1.54 GPa, 6.68 N, 21 GPa, and 230 GPa, respectively. The film deposited at −100 V exhibits good tribological performance from 25 °°C to 600 °°C. The wear mechanism of the films at elevated temperatures was discussed in detail.
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