Abstract
Na0.5Bi0.5(Ti0.99Zn0.01)O3 (NBTZn) thin films were deposited on the indium tin oxide (ITO)/glass substrates annealed under different atmospheres (air, N2, O2, O2/N2) via a metal organic decomposition process. The effects of annealing atmosphere on crystallization and electrical properties were mainly investigated. All the thin films exhibit single perovskite structures with predominant (110) orientation. Large grains are observed in N2 due to the high content of oxygen vacancy. For the film annealed in O2/N2 atmosphere, the lower leakage current density and higher dielectric tunability can be obtained, which may be ascribed to the improvement of crystallization with more homogeneous grain sizes and dense microstructure. Also, the effects of measuring frequency on dielectric constant–electric field characteristic are discussed. A higher tunability of 47.6% and figure of merit of 7.9 at 300kV/cm and 100kHz for NBTZn film can be observed.
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