Abstract
In this paper, porous silicon is employed as the substrate for Ba x Sr 1− x TiO 3 (BST) because porous silicon can provide a low substrate loss and low coupling effect due to its high resistivity compared to bulk Si. Materials of BST on porous silicon have potential application for microwave component with low loss talk. Pulsed laser deposition was used to fabricate BST films. Microstructure was characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), and high-resolution transmission electron microscopy (HRTEM). Results show that films deposited at 600 °C on porous silicon are dense polycrystalline with perovskite structure, which is similar to the structure on bulk Si. The microstructure of porous silicon substrate will affect the size distribution of the grains in the BST film. The amorphous BST layer in the interface between the crystalline BST and substrate is caused by the diffusion of silicon from the porous silicon to BST.
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