Abstract
Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.
Highlights
IntroductionLight ion implantation has been used in the microelectronics field for manufacturing advanced electronic devices on silicon-on-insulator (SOI)
H+ ions are implanted into a Si substrate, and during annealing, the hydrogen atoms and some of the vacancies generated by implantation precipitate and form platelets [8,9]
When these micro-cracks are close to the free surface of the wafer, the stress generated in the semiconductor matrix by the pressure inside the micro-cracks can elastically relax through the deformation of the surface, i.e., the formation of blisters [7,12]
Summary
Light ion implantation has been used in the microelectronics field for manufacturing advanced electronic devices on silicon-on-insulator (SOI). The other is based “smart-cut” technology, which was firstly reported by Bruel [1] The procedure of this method comprises hydrogen or hydrogen/helium co-implantation into silicon, bonding them to a substrate stiffener and annealing at a low temperature for crack growth. In order to reduce residual extended defects, three different kinds of methods can be used The first is He implantation at an elevated temperature due to the increase in dynamic annealing [19]. In order to reduce residual defects during the ion implantation, the increase in dynamic annealing via elevated temperature is a good choice. The results give a deep understanding of how to control the size, distribution and arrangement of both cavities and extended defects, and provide insight into the application of light ion implantation for the development of microelectronic devices
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
