Microstructure Evaluation and Wear Resistance Property of Al-Si-X/Al₂O₃Composite by the DisplacementReaction in Al-Mg Alloy Melt using High Energy Mechanical Milled Al-SiO₂-X Composite Powder

Abstract

Single-crystal <TEX>$ZnIn_2S_4$</TEX> layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at <TEX>$450^{\circ}C$</TEX> with a hot wall epitaxy (HWE) system by evaporating a <TEX>$ZnIn_2S_4$</TEX> source at <TEX>$610^{\circ}C$</TEX>. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the <TEX>$ZnIn_2S_4$</TEX> obtained from the absorption spectra was well described by Varshni's relationship, <TEX>$E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T＋489K)$</TEX>. After the as-grown <TEX>$ZnIn_2S_4$</TEX> single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the <TEX>$ZnIn_2S_4$</TEX> single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of <TEX>$V_{Zn}$</TEX>, <TEX>$V_S$</TEX>, <TEX>$Zn_{int}$</TEX>, and <TEX>$S_{int}$</TEX> obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted <TEX>$ZnIn_2S_4$</TEX> single crystal thin films into optical p-type films. Moreover, it was confirmed that In in <TEX>$ZnIn_2S_4$</TEX>/GaAs did not form a native defects, as In in <TEX>$ZnIn_2S_4$</TEX> single-crystal thin films existed in the form of stable bonds.