Abstract
AbstractSingle‐photon emitters (SPEs) can play an important role in future quantum optics. Hexagonal boron nitride (h‐BN), a layered insulator (bandgap ≈6 eV), is a promising candidate for next‐generation SPEs because of its chemical and thermal stability and high brightness at room temperature. In this review, the microstructures (atomic defects, deformations, and cavities) of h‐BN are established and their SPE characteristics are analyzed. Recent progress in the synthesis of high‐quality bulk h‐BN, monoisotopic h‐BN, and epitaxial h‐BN films is also demonstrated. Some approaches for achieving SPE arrays are further discussed and the applications of h‐BN SPEs in the quantum field are investigated. The success in the preparation of large‐scale h‐BN and its microstructural engineering provides a promising future in low‐dimensional quantum optics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
