Microstructure effect on EM-induced copper interconnect degradation: Experiment and simulation

Abstract

Both in situ microscopy experiments at embedded inlaid copper interconnect structures and numerical simulations based on a physical model are necessary to develop on-chip interconnect systems with a high immunity to EM-induced failures. In future, the copper microstructure will become more critical for interconnect reliability since interfaces will be strengthened, and consequently, they will not be the fastest pathways for the EM-induced mass transport anymore. As a consequence, copper microstructure characterization becomes increasingly important, and microstructure data have to be implemented into the numerical simulation. The described physical model will help to provide a closer link between the microstructure and the EM lifetime of copper interconnects.