Abstract
Cr/Cr2N multilayers were grown on (100) silicon using the reactive radio frequency magnetron sputtering technique. The total thickness of the multilayers was approximately 100nm, and the period was varied between 100nm (1 bilayer), 50nm (2 bilayers) and 25nm (4 bilayers). The phase formation and crystallite size were studied using X-ray diffraction. Thickness, period and density calculations were performed through the simulation of X-ray reflectivity data, and the resistivity values were calculated using the van der Pauw technique. The results showed that no other phases besides Cr and Cr2N were found in the multilayer films, and the evolution of the crystalline structure with period thickness is discussed. The low resistivity obtained for the multilayer structures using this technique suggests that these structures may be used in applications where low resistivity is required, such as in diffusion barriers.
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