Abstract

AbstractThe microstructure of amorphous alloys of silicon with oxygen, carbon, nitrogen and germanium is studied by effusion measurements of hydrogen and of implanted rare gases helium, neon, argon. The results suggest a general widening of network openings with increasing alloy concentration. Isolated voids disappear for wide bandgap alloys already at low alloy concentration of 5–10 at.% presumably because interconnected voids are formed. At an alloy concentration near 20–30 at.%, Ne and H2 become mobile at T < 500°C and at higher temperature/alloy concentration Ar becomes mobile, too. Void formation is mainly attributed to an increase in hydrogen incorporation.

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