Abstract
The La-Sr-Mn-O films were deposited on Si(100) substrates by DC magnetron sputtering and followed by air annealing at 973 K for 1 h. The microstructure and temperature dependence of total hemispherical emittance (ɛ H) of the annealed La-Sr-Mn-O films prepared at various processing parameters were investigated. The results indicated the films deposited at lower sputtering pressure and lower O 2/(O 2+Ar) volume proportion ( R O) were present in rhombohedral perovskite structure and the length of Mn-O bond was shorter. The metal-insulator transition temperature ( T MI) was higher. All of the annealed films showed the unique feature of variable emittance based on metal-insulator transition. The films showed low emittance at low temperature but high emittance at high temperature. Moreover, the ɛ H significantly changed in the vicinity of T MI. The variability of total hemispherical emittance (Δɛ) and the temperature range with obvious emittance change could be adjusted by changing the processing parameters. The Δɛ could be 0.45 and Δɛ/ɛ 355 (ɛ 355 is the ɛ H at 355K) exceeded 50% for the annealed La-Sr-Mn-O films. Therefore, the annealed La-Sr-Mn-O films showed much potential for thermal control applications as smart thermochromic variable emittance materials.
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