Microstructure and the grain boundaries evolution in sequential epitaxial buffer layers on RABiTS-Substrates

Abstract

Epitaxial buffer layers of CeO2 and Yttria-stabilized ZrO2 (YSZ) have been deposited on biaxially textured nickel substrates using reel to reel thermal reactive evaporation, and rf sputtering. The degree of texture of the deposited buffer layers were analysed by X-ray pole figure, Out-of-plane (w-scan) and in-plane (Φ-scan) texture. The Microstructures of oxide buffer layer was determined by electron backscattering diffraction (EBSD) partially and SEM in selected marked area, providing information on the propagation of the grain boundary network from the substrate to the buffer layers in the same expected area. The oxide layer sequence, YBCO/CeO2/YSZ/CeO2/NiW was the same in each sample, but different deposition techniques were used to deposit the YBa2Cu3O7 films: MOCVD, PLD, and DC-sputtering. Transport measurements on the coated conductor samples were measured 1.2 MA/cm2, and 1.0 MA/sm2, 1.8 MA/cm2 at 77 K (0 T) respectively.