Abstract
Stoichiometric AuCu alloy has been well studied in bulk form, but the resistivity of very thin films has rarely been reported. In fact, thin copper and gold films show a strong deviation from bulk resistivity due to the size effect, which motivates us to study CuAu I thin films and understand the properties of nanoscale metallization in more details. Very thin films of ordered CuAu I phase were formed by interdiffusion of Cu∕Au bilayers, in which the intermetallic phase formation was characterized by glancing angle x-ray diffraction and transmission electron microscopy. It was found that Kirkendall voids were created during the interdiffusion. Also, as it turned out, the resistivity of such thin CuAu I films changed only slightly with decreasing film thickness, which was different from pure copper and gold thin films.
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