Microstructure and properties of silicon nitride ceramics fabricated by vat photopolymerization in combination with pressureless sintering

Abstract

Silicon nitride (Si3N4) ceramics have been successfully manufactured using vat photopolymerization (VPP) technology. The formulated photocurable paste achieved a high solid loading (48 vol%) while maintaining low viscosity (3.2 Pa s at a shear rate of 30 s−1). Si3N4 ceramics doped with Al2O3–Y2O3 sintering aids were prepared using pressureless sintering at different temperatures (1650 °C, 1700 °C and 1750 °C) for 2 h. The resultant material exhibited a flexural strength of 613.3 ± 53.1 MPa, Vickers hardness of 12.6 ± 0.4 GPa, and a fracture toughness of 7.5 ± 0.3 MPa m1/2. X-ray diffraction (XRD) analysis has demonstrated a complete transformation from α-Si3N4 to β-Si3N4 at a sintering temperature of 1750 °C, where the resultant ceramic exhibited distinctive grain growth anisotropy. By investigating the shrinkage at different sintering temperatures, the sample at 1750 °C has a larger shrinkage in the Z-direction, which is also related to its anisotropic grain growth. Scanning electron microscopy (SEM) images have revealed the presence of elongated grains at a sintering temperature of 1750 °C. The combined effect of elongated grains and growth anisotropy serves to significantly enhance the overall mechanical properties of the material. This study advances current research on the preparation of high-performance Si3N4 ceramics by combining VPP technology with pressureless sintering.