Abstract
High current pulsed electron beam (HCPEB) technology was applied to irradiate the surface of mono-crystalline Ge wafers (Ge (100) and Ge (111)) with different orientations, and the microstructure and properties of the irradiated surface were analyzed in detail. The results show that after HCPEB irradiation, numerous molten pits and local microcracks were produced on the surface of mono-crystalline Ge, and the pit density decreased with the increase of irradiation pulses. TEM observations indicated that after irradiation, the defects are mainly vacancy group defects and dislocation rings, and Ge nanocrystals with uniform size distribution are produced. HCPEB irradiation also formed self-assembled nanostructures on the surface of Ge. Cross section TEM indicated that the 250 nm deep defect channels were under the quantum dots, which confirms the formation mechanism of self-assembled nanostructures. The photoluminescence results indicated that the irradiated mono-crystalline Ge still has blue emission properties, and the luminescence mechanism is the quantum confinement effect of Ge nanocrystals embedded in slightly oxidized or nitrided amorphous structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
