Microstructure and properties of diamond/SiC composites prepared by tape-casting and chemical vapor infiltration process

Abstract

This article reported a novel method for preparing diamond/SiC composites by tape-casting and chemical vapor infiltration (CVI) process, and the advantages of this method were discussed. The diamond particle was proved to be thermally stable under CVI conditions and the CVI diamond/SiC composites only contained diamond and CVI-SiC phases. The SEM and TEM results showed a strong interfacial bonding existed between diamond and CVI-SiC matrix. Due to the strong bonding, the surface HRA hardness could reach up to 98.4 (HV 50 ± 5 GPa) and the thermal conductivity (TC) of composites was five times higher than that of pure CVI-SiC matrix. Additionally, the effects of diamond particle size on microstructure and properties of composites were also investigated. With the increasing of particle size, the density and TC of composites with the size 27 μm reached 2.940 g/cm3 and 82 W/(m K), respectively.