Abstract
In this work, an SiC-based electroconductive composite is obtained through simultaneous addition of MoSi2 and ZrB2 particles. The composite material is fully densified by hot pressing at 1860 °C and the microstructure is investigated by SEM-EDS analysis. Microstructural features and mechanical properties are compared to those of a monolithic hot-pressed SiC material. The MoSi2 and ZrB2 particles, besides increasing the electrical conductivity of the silicon carbide matrix, also act as reinforcement for the material. Room-temperature strength reaches the value of 850 MPa and the fracture toughness is 4.2 MPa m0.5. The composite electrical resistivity is of the order of 10−3 Ω cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
