Abstract
Transmission electron microscopy is used to investigate the structural characteristics of epitaxial ZnO thin films grown on (LaAlO 3) 0.3(Sr 0.5Ta 0.5O 3) 0.7(111) (LSAT) by rf plasma-assisted molecular beam epitaxy. It is found that the growth temperature plays a key role in the formation of microstructures in ZnO film. Growth temperature dependence of rotation domain, interface and dislocation structures is studied, and the mechanism for polarity selection is discussed.
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