Abstract
Er-doped SiOx films were synthesized at 500 degrees C by ion beam assisted deposition technique and annealed at 800 and 1100 degrees C for 2h in the air atmosphere. The analysis by using energy dispersive x-ray spectroscopy showed that the ratio of Si to O decreased from 3 in the as-deposited films to about 1 in the annealed films. The investigation by using transmission electron microscopy and x-ray diffraction indicated that annealing induces a microstructure change from amorphous to crystalline. The grain sizes in the films were about 10 and 40nm when annealed at 800 and 1100 degrees C, respectively. The films annealed at temperatures of 800 and 1100 degrees C exhibited a sharp photoluminescence (PL) at 1.533μm from the Er centres when pumped by 980nm laser. The influence of microstructure and grain size on the PL from Er-doped SiOx films has been studied and discussed.
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