Abstract
In this study, porous silicon (PS) templates were formed by electrochemical anodization on p-type (100) silicon wafer and ZnO films were deposited on PS substrates using radio frequency (RF) reactive magnetron sputtering technique. The effects of oxygen partial pressures of growth ZnO films and annealing ambience on the microstructure and photoluminescence (PL) of the ZnO/PS nanocomposite films were systematically investigated by X-ray diffraction and fluorescence spectrophotometry. The results indicated that all ZnO/PS nanocomposite films were polycrystalline in nature with a hexagonal wurtzite structure and the (002) oriented ZnO films had the best crystal quality under O 2:Ar ratio of 10:10 sccm and annealing in vacuum. PL measurements at room temperature revealed that ZnO/PS nanocomposite systems formed a broad PL band including the blue and green emissions from ZnO and red-orange emission from the PS. The mechanism and interpretation of broadband PL of the nanocomposites were discussed in detail using an oxygen-bonding model in PS and a native defects model in ZnO.
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