Abstract
Monodispersed and high-density nanocrystalline GaN particles were in situ synthesized in silica xerogel by a sol–gel method. Microstructure and morphology analyses reveal that as-prepared GaN crystallites were hexagonal phase. It is well dispersed in silica matrix with uniformed size, and its average size varied from 3 to 8 nm with prolonging the nitridation period and enhancing the reaction temperature. The FTIR spectrum shows a Ga N bond stretch present at 600 cm −1, which indicated that the element Ga atom dominantly existed with Ga N bond in the samples. Room temperature photoluminescence (PL) exhibited a non-size-dependence near band-edge emission of GaN at 390 nm and another PL emission peak about 565, 570, 580 nm with different intensity in three samples, respectively. The possible reason for the PL results was proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
