Abstract
The mid-wave single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE). Microstructure and optical properties of the MBE growth HgCdTe films grown at different temperatures were characterized by X-ray diffraction, scanning transmission electron microscopy, Raman and photoluminescence. The effects of growth temperature on the crystal quality of HgCdTe/CdTe have been studied in detail. The HgCdTe film grown at the lower temperature of 151 °C has high crystal quality, the interface is flat and there are no micro twins. While the crystal quality of the HgCdTe grown at higher temperature of 155 °C is poor, and there are defects and micro twins at the HgCdTe/CdTe interface. The research results demonstrate that the growth temperature significantly affects the crystal quality and optical properties of HgCdTe films.
Highlights
Infrared detectors are widely used in the military, industry and other fields
The single-crystal HgCdTe (211) films were successfully grown on GaAs (211) B substrates by molecular beam epitaxy (MBE), and the effects of growth temperature on the crystal quality of HgCdTe/CdTe interface were studied
The HgCdTe film grown at 151 âŠC has high crystal quality, the interface is flat and there are no micro-twins
Summary
Infrared detectors are widely used in the military, industry and other fields. The majority of current commercially available high-performance IR photodetectors are developed using III-V and II-VI semiconductor, such as InGaAs, InSb, HgCdTe, and type-II superlattices [1,2,3]. The HgCdTe and InSb are the main research objects for military and aerospace applications at mid-wave length. The high-operating-temperature (HOT) mid-wave HgCdTe infrared detectors have attracted attention [6,7]. The main problem caused by the HOT detectors is the increased number of defects and greater low-frequency noise. Improving material performance is the key to develop HOT mid-wave infrared detectors. The mid-wave HgCdTe [8,9] has become a promising avalanche photon detector (APD) material, which has important application prospects in three-dimensional Lidar imaging. For APD materials, high-purity HgCdTe with a low defect density is more critical. It is necessary to explore high-performance mid-wave HgCdTe infrared detection materials
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