Abstract
Abstract A combined approach of high-resolution transmission electron microscopy and electron energy-loss near-edge structure studies was employed to determine the atomic structure and bonding mechanisms at Cu/Al2O3 interfaces in dependence on the α-Al2O3 substrate orientation. The investigated specimens were prepared by molecular beam epitaxy using ultrahigh vacuum conditions, which led to atomically abrupt interfaces. The results show that intermetallic Cu–Al bonds occur at the investigated Cu/ (112̅0)Al2O3 interface, while ionic-covalent bonding contributions are observed at the Cu/(0001)Al2O3 interface. The interfacial microstructure of diffusion-bonded Cu/ (0001)Al2O3 samples was changed by annealing treatments under various oxygen partial pressures. Annealing resulted in the formation of a CuAlO2 reaction phase at the interface between Cu and Al2O3.
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