Abstract

AbstractMo-Si-N films with a high nitrogen concentration were produced by sputter-deposition in the presence of nitrogen plasma. The chemical composition was determined with Rutherford backscattering and nuclear reaction analysis. The ratio of Mo to Si was 1:2 in the coatings with a nitrogen concentration of 50 %. The microstructure of the as-deposited coatings on a silicon substrate was amorphous and no crystallization was found after annealing up to 1000 °C, although some relaxation was observed in X-ray diffraction. This was confirmed in highresolution transmission electron microscope examination. The hardness of the Mo-Si-N films was 18.8 GPa as determined with a nanoindenter. This is significantly higher than that of MoSi2 films, 11.2 GPa. The hardness of the Mo-Si-N films increased to 24.4 GPa after annealing at 800 °C, which is approximately the same as the hardness of the high-temperature tetragonal phase of MoSi2, 25.5 GPa. Similarly, the modulus of the as-deposited Mo-Si-N film was higher (257 GPa) than that of the MOSi2 film (222 GPa). However, only a slight increase in the modulus of the Mo-Si-N film was found after annealing at 800 °C, whereas the modulus of the crystallized tetragonal MoSi2 was 382 GPa. No cracking was found in the Mo-Si-N films even after annealing at 1000 °C.

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