Abstract
The MgO thin films were deposited on CoFeB and CoFeC magnetic underlayers at room temperature by magnetron sputtering. The microstructures of the MgO films were investigated by high-resolution transmission electron microscopy (TEM). The results showed that the atomically resolved MgO (0 0 1) lattice planes were parallel to the film plane for MgO layers with CoFeB and CoFeC underlayers. Besides, the X-ray diffraction analyses indicated that the intensity of MgO (0 0 2) diffraction peak was enhanced as the MgO layer was deposited on the CoFeC underlayer. The relatively large tunnelling magnetoresistance ratio for the as-deposited film was obtained at room temperature as the MgO layer was deposited on the CoFeC underlayer. The larger tunnelling magnetoresistance ratio in as-deposited CoFeC/MgO/CoFe magnetic tunnel junction may be related to the higher (0 0 1) texture of the MgO barrier.
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