Abstract
Microstructure and magnetic properties of In1−xCrxN thin films grown on GaN-on-sapphire templates by molecular beam epitaxy are investigated. Optimized growth conditions are identified for the In1−xCrxN thin films at reduced growth temperature. The In1−xCrxN thin films on the top of the InGaN buffer layers exhibit high crystalline-quality. The magnetic properties of In1−xCrxN thin films show a ferromagnetic behavior even at room temperature.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
