Abstract
To improve the c-axis oriented columnar growth, the nucleation of CoCr crystals on various underlayers which are formed on substrates prior to CoCr alloy deposition is studied. Microstructures of vacuum deposited CoCr alloy films are examined by transmission electron microscopy (TEM). It is found that an amorphous-like Ge is a suitable underlayer material to prepare highly oriented CoCr films. Cross-sectional TEM study indicates that the CoCr film formed on Ge layer consists of pillarlike crystals grown vertically throughout the film thickness. The CoCr film formed on Ge layer has a large perpendicular magnetic anisotropy. The read-write (R/W) characteristics have been markedly improved using the highly oriented CoCr film and a very high recording density of D 50 =230 kFCI is achieved, The role of the Ge layer on nucleation of CoCr crystal is discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
