Abstract
Using scanning tunneling microscopy, we observed the formation process of ruthenium silicide on a monolayer Ru-deposited Si(001) surfaces at high temperature. Ruthenium silicide islands of nanometer scale are formed after heating to 1400K. They tend to be aligned in the [110] and 1⁄21 10 directions. Locally observed spectroscopic results were compared with other spectral data. Large islands showed compositional inhomogeneity, with a widened band gap near the interface with the Si substrate, suggesting that growth of the islands occurs due to incorporation of Si atoms from the edges of nearby steps. [doi:10.2320/matertrans.M2012154]
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