Abstract
We report the high temperature electronic transport properties of SrFeO 3 − δ epitaxial thin films obtained by pulsed laser deposition on NdGaO 3(110) substrates. The films show total conductivity higher than the bulk material and apparent activation energy of about 0.12 eV in O 2, lower than reported values for SrFeO 3 − δ films. The conductivity dependence with oxygen partial pressure shows a power dependence with an exponent close to + 1/4, in agreement with expected point defect equilibrium. For a given oxygen partial pressure, the temperature coefficient of resistance (TCR) shows a low positive value of about 1.5–2.5 10 − 3 K − 1 , which is still suitable for resistive oxygen sensing applications. The transport properties of the films are discussed in view of their particular microstructure.
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