Microstructure and growth mechanism of SiC nanowires with periodically fluctuating hexagonal prisms by CVD

Abstract

SiC nanowires with periodically fluctuating hexagonal prisms were synthesized on graphite substrates by a simple and economical technique of chemical vapor deposition in an Ar atmosphere without catalyst assistant. The morphology and structure of SiC nanowires were characterized by X-ray diffraction, Raman scattering spectrum, scanning electron microscopy and transmission electron microscopy. The results showed that the as-synthesized SiC nanowires possessed well crystalled β-SiC, and were composed of periodically fluctuating hexagonal prisms along their whole length with the [1 1 1] growth direction. The growth of SiC nanowires with periodically fluctuating hexagonal prisms was governed by vapor–solid mechanism.