Abstract
Mn-substituted (0–10at.%) BiFeO3 (BFO) thin films were fabricated by chemical solution deposition on Pt∕Ti∕SiO2∕Si substrate. X-ray diffraction analysis revealed that no secondary phase appeared even if Fe atoms were substituted with Mn atoms up to 10at.%. However, in the 10at.% Mn-substituted BFO film, the lattice parameters decreased by approximately 0.6%. Substitution of small amount of Mn atoms such as 3–5at.% in BFO films was effective in reducing the leakage current density at a high electric field. The P-E (polarization versus electric field) hysteresis loops were measured by changing frequencies of triangular voltage pulses from 1to100kHz. In Mn-substituted BFO films, frequency dependences of the remanent polarization were not pronounced in the range from 10to100kHz and these measurements showed that the remanent polarization increased with increase of the Mn concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
