Abstract
A systematic study is presented of the effects of silicon dopant type, resistivity, current density, and hydrofluoric acid concentration on the formation and properties of porous silicon. Cross-section transmission electron microscopy revealed the presence of two distinct microstructures. The structure formed is determined by the doping level with the transition occurring near degeneracy. A model of the anodisation process is presented which is based on the semiconducting properties of the material and which explains the formation of the two different types of porous structure observed.
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