Abstract
Lead zirconate titanate (PZT) thin films were deposited on Pt/Ti/SiO 2/Si and interlayer/Pt/Ti/SiO 2/Si substrate by radio frequency (r.f.) magnetron sputtering with a Pb 1.1Zr 0.53Ti 0.47O 3 target. The crystallization of the PZT thin films was formed only by substrate temperature. When interlayer (PbO/TiO 2) was inserted between the PZT thin film and the Pt electrode, the grain growth and processing temperature of the PZT thin films were considerably improved. Compared to PZT/Pt structure, the dielectric constant and polarization properties of the PZT/interlayer/Pt structure were fairly improved. In particular, PZT/interlayer/Pt at the substrate temperature of 400 °C showed prevalent ferroelectric properties ( ɛ r=475.97, tan δ=0.0591, P r=23 μC/cm 2). As a result of an X-ray photoelectron spectroscopy (XPS) depth-profile analysis, it was found that PZT/interlayer/Pt deposited only by substrate temperature without the post-annealing process via r.f. magnetron sputtering method remained independent of each other regardless of substrate temperatures.
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