Abstract
ABSTRACT Bismuth titanium tantalum—Bi3TiTaO9 (BTT) thin films with different thickness from 100 nm to 400 nm were successfully fabricated on Pt/Ti/SiO2/Si(100) substrates using modified metalorganic decomposition (MOD) technique at different annealing temperatures. The microstructure of BTT thin films was affected by the film thickness and process temperature. Definite c-axis orientation growth of BTT thin films was found for Pt/Ti/SiO2/Si(100) substrate. The c-orientation ratio and grain size increased with the increase of post annealing temperature. The grain size in BTT thin films annealed at 750°C and 800°C was about 90∼ 100 nm and 150∼ 180 nm, respectively. The higher the process temperature, the higher the c-axis orientation of BTT thin film was. The growth of BTT thin film was affected by the microstructure of the lower layer and the effect of substrate. BTT thin films annealed at 800°C was found to have much improved remanent polarization (Pr) than that at 650°C and 750°C. The Pr and Ec values were measured to be 2 μ C/cm2 and 100 kV/cm, respectively. The critical grain size existed in BTT thin films, and BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.
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