Microstructure and electrical properties of Pr6O11 doped ZnO-Bi2O3-based varistors

Abstract

The microstructure and electrical properties of ZnO-Bi2O3-based varistor ceramics doped by Pr6O11 in the content range of 0–5.49 wt% were investigated at different sintering temperatures (1,100, 1,150, 1,175, 1,200 °C). The increase of sintering temperature leads to more dense ceramics, which increases the nonlinear property, whereas it decreases the voltage-gradient and leakage current. With increasing Pr6O11 content, the breakdown voltage increases because of the decreases of ZnO grain size. The improvement of non linear coefficient together with the decrease of leakage current are related to the uniformly distribution of secondary phases along the grain boundaries of the ZnO. The varistors sintered at 1,175 °C with the 3.37 wt% Pr6O11 doping possess the best electrical properties: the varistor voltage, nonlinear coefficient, and leakage current are 340 V/mm, 46 and 0.63 μA, respectively.