Abstract

Lead magnesium niobate-lead titanate (PMN-PT) ferroelectric thin films with composition near the mor- photropic phase boundary (MPB) were deposited on Si substrate by oxygen plasma assisted pulsed laser deposition (PLD). Highly (001)-oriented PMN-PT thin films with lower oxygen defect and higher crystalline property were ob- tained. The results show that the microstructure and electrical properties of PMN-PT thin films strongly depend on the partial pressure and the activity of oxygen in the deposition process. With the use of oxygen plasma, the dielectric con- stant of the PMN-PT thin film is increased from 1484 to 3012, the remnant polarization (2Pr) changes from 18μC/cm 2

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