Abstract
A sol-gel method of preparation doped ZnO varistor nanomaterials is described, The influences of doped ZnO nanomaterials for varistor microstructure and electrical properties (nonlinear coefficient α, breakdown voltage V1mA , dielectric constant ε, and dielectric loss tan δ) are investigated. Compared with the conventional mixed oxide technique, varistor ceramic of prepared by nanometer materials showed a more homogeneous microstructure, smaller grain sizes, higher densities and excellent electrical properties.
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