Abstract
AbstractLa1−x SrxMnO3(0.19≤x≤0.31) thin films were prepared on silicon wafers by sputter techniques. The effect of substrate temperature, chemical composition and post-deposition heat-treatment on the crystalline structure and electrical characteristics of the films was investigated. The films grown at a substrate temperature of 500°C were found to be of the pseudo-tetragonal system (0.97≤a/c≤1) and exhibited a strong tendency of {001} planes to lie parallel to substrate surface. With the increase of x, the electrical resistivity of the films decreased and the transition temperature between the metallic and semiconducting electrical transport behaviors shifted to high temperature. With a magnetic field of 0.18 Tesla, the maximum magneto-resistance ratio (MR%) of La0.69Sr0.31MnO3 polycrystalline thin films was about 390%.
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