Abstract
In this study, the epitaxial growth of the full-composition-graded Al x Ga 1-x N films has been demonstrated on the sapphire substrates by using metalorganic chemical vapor deposition (MOCVD). The aluminum composition in the Al x Ga 1-x N films has been precisely controlled from 0 to 100%, as confirmed by X-ray diffraction and energy-dispersive spectroscopy analyses. The pseudo-periodic Al x Ga 1-x N/Al y Ga 1-y N structures are spontaneously formed during the initial growth of the graded AlGaN layer, which facilitate the strain relaxation. In addition, the behavior of the bending dislocations has been investigated in detail, and the threading dislocation bending along the growth direction is noted to relax the strain further. • We report the experimental full-composition graded Al x Ga 1-x N grown by MOCVD. • The pseudo-periodic structures with different intervals Al x Ga 1-x N layers and dislocation bending jointly regulate the relaxation of the compressively strained AlGaN layers. • The pseudo-periodic structures are composed of, which spontaneously formed during the initial growth stage of Al x Ga 1-x N.
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