Abstract
Microstructure and conduction of ceramic composites Bi2CuO4 + xBi2O3 (x = 5, 10, 15, 20 wt %) near the eutectic melting point (770°C) are studied. Bismuth oxide, initially randomly distributed over the ceramics bulk, after quenching from temperatures exceeding the eutectic melting point, becomes localized at triple junctions and grain boundaries in Bi2CuO4, which is caused by wetting grain boundaries and forming a liquid-channel structure. The jumpwise change in the composites’ conductivity near 730 and 770°C caused by polymorphic transformation of Bi2O3 and the eutectic melting with simultaneous formation of a liquid-channel structure. Transport numbers of the oxygen ion are measured at 770°C by coulomb-volumetric method. The conduction by oxygen ions increases in the composites with decreasing average size of Bi2CuO4 crystallites.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
