Abstract
Scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy data for the topmost part of an anodically etched (111) p-Si wafer exhibiting bright visible photoluminescence have been analysed with regard to microstructure and chemical composition. It is concluded that this region consists of two layers. The first topmost layer contains six compounds: Si-(O2H2), SiO2, SiO, Si6O3H6, Si and SiH. In this layer the silicon species depth profile and temperature dependence were investigated. We find that Si-(O2H2) and SiH decomposed completely at 650 K and at 730 K respectively. The amount of siloxene is independent of temperature up to 650 K and then begins to decrease. This was accomplished with desorption of hydrogen from Si6O3H6 surface species and irreversible oxidation of the samples.
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