Abstract
AbstractIn this work, P‐doped GaN nanowires were synthesized in a co‐deposition CVD process and the effects of P‐doping on the microstructure and cathodoluminescence (CL) of GaN nanowires were studied in details. SEM observation and CL measurments demonstrated that P‐doping has led to a rough morphology evolution and a depression of the band‐gap emission of GaN nanowires, whereas the visible emission of GaN nanowires was obviously enhanced. Finally, the corresponding morphology transition and optical properties of GaN nanowires with P‐doping were discussed. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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