Abstract
TaN-Cu nanocomposite thin films used as materials for thin-film resistors (TFR) were prepared by magnetron pulsed dc reactive sputtering. Structural and morphological properties of films deposited on (100) Si as a function of nitrogen flow rate and substrate temperature is investigated. With the introduction of N2 gas flow indicated with different phases of nanocrystalline h-Ta, Ta2N, TaN, Ta4N5 and Cu. XRD analysis of the films deposited with increasing substrate temperature at constant flow rate of nitrogen 10 sccm indicated that the nanocrystalline with bi-phasic (fcc-TaN and fcc-Cu). The microstructure of the films was investigated by scanning electron microscopy and high-resolution transmission electron microscopy.
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