Abstract
The microstructure, in particular, the surface and interface regions, of the c-axis orientated AlN films deposited on Si (100) substrates was studied. The films showed an evolutionary columnar growth process. In contrast to the previous reports, high-resolution transmission electron microscopy revealed that the AlN films grew directly on substrates without an amorphous interlayer, despite the large lattice mismatch between AlN and Si. The occurrence of misoriented and/or amorphous top layer suggested a subsurface growth/relaxation process of the AlN films by reactive sputtering.
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