Abstract
ZnO thin films were grown on p-InP(1 0 0) substrates by using radio-frequency magnetron sputtering at low temperature (∼200°C). Atomic force microscopy images showed that the root mean square of the average surface roughness of the ZnO film was 17.2 Å, and X-ray diffraction and transmission electron microscopy (TEM) measurements showed that the ZnO film layers grown on the InP substrates were epitaxial films with strong (0 0 0 1) preferential orientation. Auger electron spectroscopy and bright-field TEM measurements showed that the ZnO epitaxial films grown on InP substrates at 200°C had no significant interdiffusion problems. These results indicate that the ZnO epitaxial films grown on p-InP(1 0 0) substrates at low temperature, hold promise for new kinds of potential high-speed optoelectronic devices based on InP substrates, such as low-loss optical waveguides and high-efficiency solar cells and that the ZnO epitaxial films grown on p-InP(1 0 0) substrates can be used as promising buffer layers for the growth of the GaN-related epilayers.
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