Year-end Sale % OFF 
Abstract
As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~1.9at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800°C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
