Abstract

Diluted magnetic semiconductor (DMS) materials have attracted much attention because of the interest in both investigations of fundamental physical properties and promising applications for various spintronic devices. Among many DMS structures, (III1−xMnx)V ferromagnetic semiconductor quantum structures have been particularly attractive due to their potential applications in spintronic devices and they have combined properties of both III–V semiconductors and Mn ferromagnetic compounds, and the excellent advantages derived by utilizing mature III–V based heterostructure technology. Even though not many papers have been reported on the formation of one layer of (III1−xMnx)V Quantum structure‐Quantum Dots(QDs) and Quantum Wires(Q‐Wire), systematic studies concerning microstructural, magnetic, and optical properties of the (III1−xMnx)V quantum structure have been more attractive because of the interest in promising applications in optoelectronic devices, such as spin injection lasers and spin switching devices.

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