Microstructural evolution of oxides and semiconductor thin films

Abstract

This review article introduces the preparation methodologies and the microstructural characteristics of semiconductor thin films, including SnO 2 thin films, Au/Ge bilayer films, and Pd–Ge alloy thin films, and metal oxides, including SnO, SnO 2, Mn 2O 3 and Mn 3O 4 nanocrystals which can be in the form of nanoparticles, nanowires, nanorods, and nanofractals. Firstly, the preparation methodologies and the microstructural characteristics of tin oxides have been investigated in detail and described in Section 2. Secondly, the crystallization of amorphous Ge, and the formation of nanocrystals and compounds developed with improved micro- and nanostructured features are described in Section 3. Thirdly, a novel selective synthesis route for various morphologies of manganese oxides nanocrystals, including nanoparticles, nanorods and nanofractals, and their unique microstructural characteristics are presented in Section 4. Intricate fundamental properties of manganese oxides nanocrystals are studied in detail. To sum up, it is expected that the fabrication methodologies developed and the knowledge of microstructural evolution gained in semiconductor thin films, including SnO 2 thin films, Au/Ge bilayer films, and Pd–Ge alloy thin films, and metal oxides, including SnO, SnO 2, Mn 2O 3 and Mn 3O 4 nanocrystals in the forms of nanoparticles, nanowires, nanorods, and nanofractals, will provide an important fundamental basis underpinning further interdisciplinary (physics, chemistry and materials science) research in this field leading to promising exciting opportunities for future technological applications involving these oxide and thin film materials.