Abstract
Radiation-induced dislocation loop evolution in ion irradiated commercially pure (CP) Ti was investigated through both ex situ 4 MeV Ar beams and by in situ TEM irradiation with 1 MeV Kr ion beams at different temperatures. The dominant mechanism for dislocation loop growth was loop coalescence. Both <a>- and c-component loops exhibited an increase in size and density with increased irradiation dose and temperature. C-component loops were observed only after reaching a threshold incubation dose (TID). In CP Ti, these loops initiated at lower doses compared to previous observations in Zr, and the TID decreased with increasing temperature.
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