Abstract
The microstructural evolution during annealing of thin nickel foils (≈ 12 μm) that had been homogeneously implanted with helium up to concentrations of 1 at.% has been investigated by measurements of the electrical resistivity, by differential dilatometry and transmission electron microscopy (TEM). The most characteristic changes of the microstructure are: (i) for temperatures below annealing stage V of radiation damage annealing ( T </ 650 K) major changes are observed only by a decrease of the electrical resistivity that reveals recombination reactions of small clusters of radiation defects; (ii) by annealing through the temperature range of stage V ( T </ 790 K) a rearrangement and growth of the He-vacancy complexes into bubbles is observed; (iii) at higher temperatures ( T < 1070 K) bubble growth is observed by TEM and differential dilatometry directly shows that thermal vacancies are absorbed by He-bubbles. The average bubble pressure tends to approach the thermal equilibrium pressure.
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